View SKM500GA174D_1309870.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

SKM 500 GA 174 D Absolute Maximum Ratings
Symbol Conditions 1)
VCES VCGR IC; ICN ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = -IC IFM = -ICM IFSM I 2t RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. 4) IEC 60721-3-3 IEC 68 T.1 Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C 1700 1700 600 / 440 5) 1200 / 880 20 3100 -40 ... +150 (125) 3400 class 3K7/IE32 40/125/56 600 / 440 1200 / 880 4400 96800
Values Units
V V A A V W C V
SEMITRANS(R) M Low Loss IGBT Modules SKM 500 GA 174 D
Inverse Diode 8) A A A A2s
SEMITRANS 4
Characteristics
Symbol Conditions 1)
V(BR)CES VGE = 0, IC = 8 mA VGE(th) VGE = VCE, IC = 18 mA ICES Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C IGES VGE = 20 V, VCE = 0 VCEsat IC = 400 A VGE = 15 V; IC = 500 A Tj = 25 (125) C gfs VCE = 20 V, IC = 400 A CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 1200 V VGE = -15 V / +15 V 3) IC = 400 A, ind. load RGon = RGoff = 3 Tj = 125 C (VCC = 900 V/1200 V) LS = 60 nH (VCC = 900 V/1200 V) IF = 400 A VGE = 0 V; IF = 500 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 400 A; Tj = 25 (125) C2) IF = 400 A; Tj = 25 (125) C2) per IGBT per diode D per module
min.
typ.
- 5,5 0,1 16 - 2,8(3,2) 3,1(3,7) 220 - 27 3,8 1,3 - 350 100 1100 100 170/300 135/210 2,15(1,8) 2,3(2,0) 1,3 1,6 270(550) 70(117) - - -
max.
- 6,5 1 - 0,3 3,3(3,6) - - 1,4 - - - 20 - - - - - - 2,4(2,2) - 1,5 2,1 - - 0,040 0,070 0,038
Units
V V mA mA A V V S nF nF nF nF nH ns ns ns ns mWs mWs V V V m A C C/W C/W C/W
VCES
4,5 - - - - - - - - - - - - - - - - - - - - - - - - - -
GA Features * N channel, homogeneous Silicon structure (NPT- Non punchthrough IGBT) * Low inductance case * High short circuit capability, self limiting * Fast & soft inverse CAL diodes 8) * Without hard mould * Large clearance (13 mm) and creepage distances (20 mm) Typical Applications * AC inverter drives on mains 575 - 750 VAC * DC bus voltage 750 - 1200 VDC * Public transport (auxiliary syst.) * Switching (not for linear use)
Inverse Diode 8)
Thermal characteristics
1) 2) 3) 4) 5) 8)
Tcase = 25 C, unless otherwise specified IF = - IC, VR = 1200 V, -diF/dt = 5000 A/s, VGE = 0 V Use VGEoff = - 5 ... - 15 V Option Visol = 4000V/1 min add suffix H4" - on request Limited by terminals to IC(DC) = 500 A at Tc = Tterminal 100 C CAL = Controlled Axial Lifetime Technology
(c) by SEMIKRON
000828
B 6 - 73
SKM 500 GA 174 D
4000 W 3000
m500ga17.xls - 1
800 mWs 600
m500ga17.xls - 2
Eon
Tj = 125 C VCE = 1200 V VGE = + 15 V RG = 3
2000
400 Eoff
1000 Ptot 0 0 TC 20 40 60 80 100 120 140 160 C
200 E 0 0 IC 200 400 600 A 800
Fig. 1 Rated power dissipation Ptot = f (TC)
Fig. 2 Turn-on /-off energy = f (IC)
800 mWs 600
m500ga17.xls - 3
Eon
Tj = 125 C VCE = 1200 V VGE = + 15 V IC = 400 A
10000 A 1000
m500ga17.xls - 4
tp = 20s 100s
1 pulse TC = 25 C Tj 150 C
400 Eoff
100 1ms
200 E 0 0 RG 5 10 15 20 25
10 IC
10ms (DC)
Not for linear use
1 1 VCE 10 100 1000 V 10000
Fig. 3 Turn-on /-off energy = f (RG)
Fig. 4 Maximum safe operating area (SOA) IC = f (VCE)
m500ga17.xls - 6
2,5
m500ga17.xls - 5
Tj 150 C
VGE = 15 V RGoff = 3 IC = 400 A
12
Tj 150 C tsc 10 s
VGE = 15 V Lext < 50 nH IC = 400 A
2 di/dt=1000A/s 3000 A/s 5000 A/s
10 di/dt=1000A/s 3000 A/s 5000 A/s
8
1,5
6 allowed numbers of short circuits: <1000 time between short circuits: >1s
1 4 0,5 ICpuls/IC 0 0 VCE 500 1000 1500 V 2000
2 ICSC/IC 0 0 VCE
400
800
1200
1600 V
2000
Fig. 5 Turn-off safe operating area (RBSOA)
B 6 - 74
Fig. 6 Safe operating area at short circuit IC = f (VCE)
000828 (c) by SEMIKRON
SKM 500 GA 174 D
FIGUR7.XLS-V1
10 ICSC/ICN 8 25C
VC = 1200 V IC = 400 A RG = 3 Lext 50 nH self-limiting
125C
800 A
m500ga17.xls - 8
Tj = 150 C VGE 15V see rem. 5)
600
6 400
4 200 2 IC 0 10 VGE 12 14 16 18 V 20 0 0 T 20 C 40 60 80 100 120 140 160 C
Fig. 7 Short circuit current vs. turn-on gate voltage
Fig. 8 Rated current vs. temperature IC = f (TC)
m500ga17.xls - 10
1000 A 800 VGE = 17V 15V 13V 11V 9V
m500ga17.xls - 9
1000 A 800 VGE= 17V 15V 13V 11V 9V 400
600
600
400
200 IC 0 0 VCE 1 2 3 4 V 5
200 IC 0 0 VCE 1 2 3 4 V 5
Fig. 9 Typ. output characteristic, tp = 80 s; 25 C
Fig. 10 Typ. output characteristic, tp = 80 s; 125 C
m500ga17.xls - 12
Pcond(t) = VCEsat(t) * IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) VCE(TO)(Tj) 1,6 + 0,001 (Tj -25) [V] typ.: rCE(Tj) = 0,003 + 0,000008 (Tj -25) [] max.: rCE(Tj) = 0,0041 + 0,000006 (Tj -25) [] +2 valid for VGE = + 15 -1 [V]; IC > 0,3 ICnom
1000 A 800
600
400
200 IC 0 0 VG 2 4 6 8 10 12 V 14
Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations
(c) by SEMIKRON
Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V
000828 B 6 - 75
SKM 500 GA 174 D
20 V 16 800
m500ga17.xls - 13
ICpuls = 400 A
100,00
m500ga17.xls - 14
Cies nF
VGE = 0 V f = 1 MHz
1200V 12
10,00 Coes
8 1,00 Cres 4 VGE 0 0 QGate 1000 2000 3000 nC 4000 0,10 0 VCE 10 20 30 V C
Fig. 13 Typ. gate charge characteristic
10000 ns tdoff 1000 tdon
m500ga17.xls - 15
Fig. 14 Typ. capacitances vs.VCE Tj = 125 C VCE = 1200 V VGE = 15 V RG = 3 ind. load
10000
m500ga17.xls - 16
ns tdoff 1000 tdon
Tj = 125 C VCE = 1200 V VGE = 15 V IC = 400 A ind. load
tf 100 tr t 10 0 IC 200 400 600 A 800 0 RG 5 10 15 20 100
tr tf
t
10
25
Fig. 15 Typ. switching times vs. IC
m500ga17.xls - 17
Fig. 16 Typ. switching times vs. gate resistor RG
M500GA17.XLS-18
800 A 600 Tj = 125C typ. Tj = 25C typ. Tj =125C max. Tj= 25C max.
100
RG=
mJ 80
1,5
VCC = 1200 V Tj = 125 C VGE = 15 V
2,7
60
4
400 40 200 IF
7 15
20 EoffD
0 0 VF 1 2 3 V
0 0 IF 200 400 600 800 A 1000
Fig. 17 Typ. CAL diode forward characteristic
B 6 - 76
Fig. 18 Diode turn-off energy dissipation per pulse
000828 (c) by SEMIKRON
SKM 500 GA 174 D
0,1 K/W
m500ga17.xls - 19
0,1
m500ga17.xls - 20
K/W 0,01 0,01 D=0,5 0,2 0,1 0,05 0,02 0,01 single pulse ZthJC 0,0001 0,00001
0,001
0,0001 ZthJC 0,00001 0,00001 0,0001 tp
D=0,50 0,20 0,10 0,05 0,02 0,01 single pulse
0,001
0,001
0,01
0,1 s
1
tp
0,0001
0,001
0,01
0,1 s
1
Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f
M500GA17.XLS-22
Fig. 20 Transient thermal impedance of inverse CAL diodes ZthJC = f (tp); D = tp / tc = tp * f VCC = 1200 V Tj = 125 C VGE = 15 V
800 A 700
2,7
M500GA17.XLS-23
1000 A 800
RG= 1,5 2,7
RG= 1,5
600 500 400 300 200 100 IRR 0
15 7 4
VCC = 1200 V Tj = 125 C VGE = 15 V IF = 400 A
600
4
400
7 15
200 IRR 0 0 IF 200 400 600 800 A 1000
0 diF/dt
2000
4000
6000
8000 10000 A/us
Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG)
M500GA17.XLS-24
Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt)
C
200 180 160 140 120 100 80 60 40 20 Qrr 0 0 diF/dt 2000 4000 6000
200 A 100 A 7 15 400 A 4 RG 1,5 2,7 IF 800 A 600 A
VCC = 1200 V Tj = 125 C VGE = 15 V
8000 10000 A/us
Fig. 24 Typ. CAL diode recovered charge
(c) by SEMIKRON 000828 B 6 - 77
SKM 500 GA 174 D
SEMITRANS 4 Case D 59 UL Recognition File no. E 63 532
SKM 500 GA 174 D
Dimensions in mm Case outline and circuit diagram
Mechanical Data
Symbol Conditions min.
M1 M2 a w to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units (M6) (M6/M4) 3 27 2,5/1,1 22/10 - -
Values typ.
- - - - - -
Units max.
5 44 5/2 44/18 5x9,81 330 Nm lb.in. Nm lb.in. m/s2 g
This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Twelve devices are supplied in one SEMIBOX D without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 4)
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability.
B 6 - 78
000828
(c) by SEMIKRON

▲Up To Search▲

Price & Availability of SKM500GA174D

	To Download SKM500GA174D Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .